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參數(shù)資料
| 型號： | 2N6667 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 2N6667 |
2N6667 2N6668
3–2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
2N6667
(IC = 200 mAdc, IB = 0)
2N6668
VCEO(sus)
60
80
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
2N6667
(VCE = 80 Vdc, IB = 0)
2N6668
ICEO
—
1
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6668
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6668
ICEX
—
300
3
Adc
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
—
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)
(IC = 10 Adc, VCE = 3 Vdc)
hFE
1000
100
20000
—
—
Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VCE(sat)
—
2
3
Vdc
Base–Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VBE(sat)
—
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
|hfe|
20
—
—
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
—
200
pF
Small–Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)
hfe
1000
—
—
* Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
Figure 2. Switching Times Test Circuit
0
VCC
– 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8 V
V1
APPROX
– 12 V
[ 8 k
[ 120
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
RB
t,
TIME
(
s)
80
40
20
0
20
40
80
100
120
160
Figure 3. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4
2
1
3
0
60
140
TA
TC
0.1
Figure 4. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
5
0.7
0.3
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
1
5
ts
tr
0.1
1
3
0.5
2
.td
0.5
2
7
0.3
0.7
3
7
10
相關PDF資料 |
PDF描述 |
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| 2N6667 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6668BU | 10 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N6667BD | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6667BA | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6667AF | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6667_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 2N6667_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Silicon Power Transistors |
| 2N6667G | 功能描述:達林頓晶體管 10A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6668 | 功能描述:兩極晶體管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6668 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 |
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