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參數(shù)資料
| 型號： | 2N6661 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封裝： | TO-39 TOLL LID, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2N6661 |
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com/doc?67884
N-Channel 90 V (D-S) MOSFET
FEATURES
Military Qualified
Low On-Resistence: 3.6
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
BENEFITS
Guaranteed Reliability
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Hi-Rel Systems
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
PRODUCT SUMMARY
VDS (V)
90
RDS(on) () at VGS = 10 V
4
Configuration
Single
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
ORDERING INFORMATION
PART
PACKAGE
DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
2N6661
TO-205AD
(TO-39)
Commercial
2N6661
Commercial, Lead (Pb)-free
2N6661-E3
2N6661-2
See -2 Flow Document
2N6661-2
2N6661JANTX
JANTX2N6661 (std Au leads)
2N6661JTX02
JANTX2N6661 (with solder)
2N6661JTXL02
JANTX2N6661P (with PIND)
2N6661JTXP02
2N6661JANTXV
JANTXV2N6661 (std Au leads)
2N6661JTXV02
JANTXV2N6661P (with PIND)
2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
90
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
0.86
A
TC = 100 °C
0.54
Pulsed Drain Currenta
IDM
3
Maximum Power Dissipation
TC = 25 °C
PD
6.25
W
TA = 25 °C
0.725
Thermal Resistance, Junction-to-Ambientb
RthJA
170
°C/W
Thermal Resistance, Junction-to-Case
RthJC
20
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6661-E3 | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661JTX02 | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661JTXP02 | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661M1A | 1 A, 90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 2N6661 | 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
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