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參數(shù)資料
| 型號： | 2N6449 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-39 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 91K |
| 代理商： | 2N6449 |
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
High Voltage
Absolute maximum ratings at TA = 25C
2N6449
2N6450
Reverse Gate Source Voltage
– 300 V
– 200 V
Reverse Gate Drain Voltage
– 300 V
– 200 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
800 mW
Power Derating
6.4 mW/°C 6.4 mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature:
2N6449
2N6450
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 300
– 200
V
IG = – 10 A, VDS = V
– 100
nA
VGS = – 150V, VDS = V
Gate Reverse Current
IGSS
– 100
nA
VGS = – 100V, VDS = V
– 100
A
VGS = – 150V, VDS = V
TA = 150°C
– 100
A
VGS = – 100V, VDS = V
TA = 150°C
Gate Source Cutoff Voltage
VGS(OFF)
– 2
– 15
– 2
– 15
V
VDS = 30V, ID = 4 nA
Drain Saturation Current (Pulsed)
IDSS
210210
mA
VDS = 30V, VGS = V
Dynamic Electrical Characteristics
Common Source Forward
Yfs
0.5
3
0.5
3
mS
VDS = 30V, VGS = V
f = 1 kHz
Transfer Admittance
Common Source Output Conductance
Yos
100
S
VDS = 30V, VGS = V
f = 1 kHz
Common Source Input Capacitance
Ciss
20
pF
VDS = 30V, VGS = V
f = 1 MHz
Common Source
Crss
2.5
pF
VDS = 30V, VGS = V
f = 1 MHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-24
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6450 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
| 2N6451 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
| 2N6452 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
| 2N6453 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
| 2N6454 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
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