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參數(shù)資料
| 型號： | 2N6439 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 316-01, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 137K |
| 代理商： | 2N6439 |
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
Built–In Matching Network for Broadband Operation Using Double
Match Technique
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS*
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
33
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
146
0.83
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.2
°C/W
ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
33
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
2.0
mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
2N6439
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Order this document
by 2N6439/D
SEMICONDUCTOR TECHNICAL DATA
1
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