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參數(shù)資料
| 型號(hào)： | 2N6388 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | 2N6388 |
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1.92
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 80 V
Tc = 125
oC
0.3
3
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 80 V
1
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
5
mA
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA
80
V
VCER(sus)
Collector-Emitter
Sustaining Voltage
IC = 200 mA
RBE = 100
80
V
VCEV(sus)
Collector-Emitter
Sustaining Voltage
IC = 200 mA
VBE = -1.5V
80
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 5 A
IB = 10 mA
IC = 10 A
IB = 100 mA
2
3
V
VBE
Base-Emitter Voltage
IC = 5 A
VCE = 3 V
IC = 10 A
VCE = 3 V
2.8
4.5
V
hFE
DC Current Gain
IC = 5 A
VCE = 3 V
IC = 10 A
VCE = 3 V
1000
100
20000
hfe
Small Signal Current
Gain
IC = 1 A
VCE = 10 V
f = 1MHz
IC = 1 A
VCE = 10 V
f = 1KHz
20
1000
VF
Parallel-diode Forward
Voltage
IF = 10 A
4
V
CCBO
Collector Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
200
pF
Is/b
Second Breakdown
Collector Current
VCE = 25 V
2.6
A
Es/b
Second Breakdown
Energy
L = 12 mH
RBE = 100
VBE = -1.5 V
IC = 4.5 A
120
mJ
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Pulsed: Pulse duration = 100ms non repetitive pulse.
2N6388
2/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6388 | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| 2N6388_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR |
| 2N6388D4(8110) | 制造商:STMicroelectronics 功能描述:Low-Frequency Power Silicon NPN BJT 制造商:STMicroelectronics 功能描述:2N6388D4(8110) - Bulk |
| 2N6388G | 功能描述:達(dá)林頓晶體管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N638A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 5A I(C) | TO-3 |
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