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參數(shù)資料
| 型號： | 2N6387 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Silicon NPN Power Darlington Transistors(NPN功率達(dá)林頓晶體管) |
| 中文描述： | 硅NPN電源達(dá)林頓晶體管（npn型功率達(dá)林頓晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 65K |
| 代理商： | 2N6387 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.92
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
0.3
3
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
for
2N6387
V
CE
= 60 V
for
2N6388
V
CE
= 80 V
1
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EB
= 5 V
5
mA
I
C
= 200 mA
for
2N6387
for
2N6388
I
C
= 200 mA R
BE
= 100
for
2N6387
for
2N6388
60
80
V
V
V
CER(sus)
Collector-Emitter
Sustaining Voltage
60
80
V
V
V
CEV(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA V
BE
= -1.5V
for
2N6387
for
2N6388
60
80
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 10 mA
I
C
= 10 A I
B
= 100 mA
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
2
3
V
V
V
BE
Base-Emitter Voltage
2.8
4.5
V
V
h
FE
DC Current Gain
1000
100
20000
h
fe
Small Signal Current
Gain
I
C
= 1 A V
CE
= 10 V f = 1MHz
I
C
= 1 A V
CE
= 10 V f = 1KHz
20
1000
V
F
Parallel-diode Forward
Voltage
Collector Base
Capacitance
Second Breakdown
Collector Current
Second Breakdown
Energy
I
F
= 10 A
4
V
C
CBO
I
E
= 0 V
CB
= 10 V f = 1MHz
200
pF
I
s/b
V
CE
= 25 V
2.6
A
E
s/b
L = 12 mH R
BE
= 100
V
BE
= -1.5 V I
C
= 4.5 A
120
mJ
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Pulsed: 1s non repetitive pulse.
2N6387/2N6388
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6387/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 2N6387_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium-Power Silicon Transistors |
| 2N6387G | 功能描述:達(dá)林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6388 | 功能描述:達(dá)林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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