參數(shù)資料
型號: 2N6349AG
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Triacs Silicon Bidirectional Thyristors
中文描述: 800 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封裝: LEAD FREE, CASE 221A-07, 3 PIN
文件頁數(shù): 2/7頁
文件大小: 79K
代理商: 2N6349AG
2N6344A, 2N6348A, 2N6349A
http://onsemi.com
2
MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1)
(Gate Open, T
J
= 40 to +110
°
C, Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A
2N6349A
V
DRM,
V
RRM
600
800
V
*OnState RMS Current (Full Cycle Sine Wave 50 to 60 Hz)
(T
C
= +80
°
C)
(T
C
= +95
°
C)
I
T(RMS)
12
6.0
A
*Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T
C
= +80
°
C)
Preceded and followed by rated current
I
TSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I
2
t
59
A
2
s
*Peak Gate Power (T
C
= +80
°
C, Pulse Width = 2.0 s)
*Average Gate Power (T
C
= +80
°
C, t = 8.3 ms)
P
GM
20
W
P
G(AV)
0.5
W
*Peak Gate Current (Pulse Width = 2.0 s; T
C
= +80
°
C)
*Peak Gate Voltage (Pulse Width = 2.0 s; T
C
= +80
°
C)
I
GM
2.0
A
V
GM
10
V
*Operating Junction Temperature Range
T
J
40 to +125
°
C
*Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
T
stg
40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase
R
JC
T
L
2.0
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
°
C
ORDERING INFORMATION
Device
Package
Shipping
2N6344A
TO220AB
500 Units / Box
2N6344AG
TO220AB
(PbFree)
2N6348A
TO220AB
2N6348AG
TO220AB
(PbFree)
2N6349A
TO220AB
2N6349AG
TO220AB
(PbFree)
相關(guān)PDF資料
PDF描述
2N6344A 12 Ampere RMS Silicon Bidirectional Thyristor(12A(均方根值),600V硅雙向晶閘管)
2N6348A 12 Ampere RMS Silicon Bidirectional Thyristor(12A(均方根值),600V硅雙向晶閘管)
2N6349A 12 Ampere RMS Silicon Bidirectional Thyristor(12A(均方根值),800V硅雙向晶閘管)
2N6344G Triacs Silicon Bidirectional Thyristors
2N6344 8 Ampere RMS Silicon Bidirectional Thyristor(8A(均方根值),600V硅雙向晶閘管)
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