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參數(shù)資料
| 型號(hào)： | 2N6304 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 封裝： | M244, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 112K |
| 代理商： | 2N6304 |
2N6304
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
15
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
3.5
Vdc
IC
Collector Current
50
mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25 C
Derate above 25 C
200
1.14
mWatts
mW/ C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
Silicon RF NPN, TO-72, UHF general purpose Low Noise
Transistor
Noise Figure = 5.0 dB (typ) @ f = 450 MHz
High FT - 1.4 GHz (min) @ IC = 10 mAdc
Maximum Available Gain = 14 dB (min) @ f = 500 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6308 | 350 V, NPN, Si, POWER TRANSISTOR, TO-204MA |
| 2N6312.MODR1 | 5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6312 | 5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6312R1 | 5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6313 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6305 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N6306 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 8A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N6306 GP BJTs |
| 2N6307 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Transistors |
| 2N6308 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:125W; DC Collector Current:8A; DC Current Gain hFE:60; No. of Pins:2 ;RoHS Compliant: Yes |
| 2N6308 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
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