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參數(shù)資料
| 型號： | 2N6285 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 214K |
| 代理商： | 2N6285 |
1
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
*MAXIMUM RATINGS
Rating
Symbol
2N6282
2N6285
2N6283
2N6286
2N6284
2N6287
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
160
0.915
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ,Tstg
– 65 to + 200
_C
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.09
_C/W
* Indicates JEDEC Registered Data.
25
50
100
125
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
160
60
40
140
0
75
150
0
20
80
100
120
175
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6282/D
Motorola, Inc. 1995
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
2N6282
thru
2N6284
2N6285
thru
2N6287
*Motorola Preferred Device
*
CASE 1–07
TO–204AA
(TO–3)
NPN
PNP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6287 | 20 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6282 | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6285 | 20 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6286-JQR-B | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6286R1 | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6286 | 功能描述:達(dá)林頓晶體管 20A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6286G | 功能描述:達(dá)林頓晶體管 20A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6286JAN/TEST/BAE | 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON PNP 80V 20A 3PIN TO-3 - Bulk |
| 2N6287 | 功能描述:達(dá)林頓晶體管 PNP Darlington Sw RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6287G | 功能描述:達(dá)林頓晶體管 20A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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