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參數(shù)資料
| 型號： | 2N6166 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N6166 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 200 mA
BV
CEO
I
C
= 200 mA
BV
EBO
I
E
= 10 Ma
I
CES
V
CE
= 30 V
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
V
V
mA
mA
---
35
4.0
5.0
30
5.0
C
OB
V
CE
= 28 V
f = 1.0 MHz
130
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 100 W f = 150 MHz
6.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
2N6166
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10790
DESCRIPTION:
The
ASI 2N6166
is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 200
MHz.
FEATURES:
η
C
= 60 % min. @ 100 W/150 MHz
P
G
= 6.0 dB min. @ 100 W/150 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
9.0 A
V
CBO
65 V
V
EBO
4.0 V
P
DISS
117 W @ T
C
= 25
°C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.5 °C/W
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
.495 / 12.57
B
C
D
E
F
G
H
I
J
A
MAXIMUM
inches / mm
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.230 / 5.84
.003 / 0.08
.090 / 2.29
.150 / 3.81
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
DIM
K
L
.980 / 24.89
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
C
B
E
E
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參數(shù)描述 |
|---|---|
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