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參數(shù)資料
| 型號： | 2N6058.MODR1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 12K |
| 代理商： | 2N6058.MODR1 |
2N6058
Bipolar NPN Device.
V
CEO =
80V
I
C = 12A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
80
V
I
C(CONT)
12
A
h
FE
@ 3/6 (V
CE / IC)
750
-
f
t
4M
Hz
P
D
150
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6058-JQR-B | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6058-JQR-AR1 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6058-JQR-A | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6058 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6056 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6059 | 功能描述:達(dá)林頓晶體管 NPN Darlington LTB 9-2009 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6059 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR TO-3 |
| 2N6059 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6059_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR |
| 2N6059_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
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