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參數(shù)資料
| 型號： | 2N6045G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium−Power Complementary Silicon Transistors |
| 中文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 102K |
| 代理商： | 2N6045G |
PNP 2N6040, 2N6042, NPN 2N6043, 2N6045
http://onsemi.com
3
80
00
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
P
40
20
60
140
T
C
4.0
0
2.0
1.0
3.0
T
A
T
A
T
C
Figure 2. Switching Times Equivalent Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t
2.0
1.0
0.5
0.05
0.2
0.3
0.5 0.7
1.0
2.0
3.0
10
0.3
0.2
0.7
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0 V
V
2
approx
+8.0 V
V
1
approx
12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
25 s
0
R
B
51
D
1
+4.0 V
V
CC
30 V
R
C
TUT
≈
8.0 k
≈
120
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
For NPN test circuit reverse all polarities and D1.
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
3.0
0.1
0.07
5.0 7.0
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
PNP
NPN
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
T
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
JC
(t) = r(t)
JC
JC
= 1.67
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.1
0.3
0.03
0.02 0.03
0.3
3.0
30
300
SINGLE PULSE
0.01
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