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參數(shù)資料
| 型號(hào)： | 2N6040LEADFREE |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 260K |
| 代理商： | 2N6040LEADFREE |
2N6040
2N6041
2N6042
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6043
2N6044
2N6045
UNITS
Collector-Base Voltage
VCBO
60
80
100
V
Collector-Emitter Voltage
VCEO
60
80
100
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
8.0
A
Peak Collector Current
ICM
16
A
Base Current
IB
120
mA
Power Dissipation
PD
75
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJC
1.67
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=Rated VCBO
20
A
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V
20
A
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C
200
A
ICEO
VCE=Rated VCEO
20
A
IEBO
VEB=5.0V
2.0
mA
BVCEO
IC=100mA (2N6040, 2N6043)
60
V
BVCEO
IC=100mA (2N6041, 2N6044)
80
V
BVCEO
IC=100mA (2N6042, 2N6045)
100
V
VCE(SAT)
IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044)
2.0
V
VCE(SAT)
IC=3.0A, IB=12mA (2N6042, 2N6045)
2.0
V
VCE(SAT)
IC=8.0A, IB=80mA
4.0
V
VBE(SAT)
IC=8.0A, IB=80mA
4.5
V
VBE(ON)
VCE=4.0V, IC=4.0A
2.8
V
hFE
VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044)
1,000
20,000
hFE
VCE=4.0V, IC=3.0A (2N6042, 2N6045)
1,000
20,000
hFE
VCE=4.0V, IC=8.0A
100
2N6040 2N6041 2N6042 PNP
2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6040 and
2N6043 Series types are Complementary Silicon
Power Transistors, manufactured by the epitaxial
base process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (16-November 2009)
www.centr a lsemi.com
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| 2N6051 | 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6041 | 功能描述:達(dá)林頓晶體管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6041G | 制造商:ON Semiconductor 功能描述: |
| 2N6042 | 功能描述:達(dá)林頓晶體管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6042 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 100V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-220 |
| 2N6042G | 功能描述:達(dá)林頓晶體管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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