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參數(shù)資料
| 型號(hào)： | 2N6039 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 243K |
| 代理商： | 2N6039 |
1
Motorola Bipolar Power Transistor Device Data
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038
VCEO(sus) = 80 Vdc (Min) — 2N6036, 2N6039
Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
Monolithic Construction with Built–In Base–Emitter Resistors to Limit
Leakage Multiplication
Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6035
2N6038
2N6036
2N6039
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
4.0
8.0
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
40
0.32
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.5
0.012
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
3.12
_C/W
Thermal Resistance, Junction to Ambient
θJA
83.3
_C/W
(1) Indicates JEDEC Registered Data.
40
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
20
10
30
140
TC
4.0
0
2.0
1.0
3.0
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6035/D
2N6030 thru 2N6031
(See 2N5630)
Motorola, Inc. 1995
2N6035
2N6036
2N6038
2N6039
*Motorola Preferred Device
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
40 WATTS
*
CASE 77–08
TO–225AA TYPE
PNP
NPN
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6035 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 2N6038 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6039 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2N6295 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6044LEADFREE | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6039G | 功能描述:達(dá)林頓晶體管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6040 | 功能描述:達(dá)林頓晶體管 PNP Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6040/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Plastic Medium-Power Complementary Silicon Transistors |
| 2N6040_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Plastic Medium−Power Complementary Silicon Transistors |
| 2N6040_07 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Plastic Medium-Power Complementary Silicon Transistors |
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