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參數(shù)資料
| 型號： | 2N5962D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 469K |
| 代理商： | 2N5962D27Z |
2N5962/
MMBT5962
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
45
V
VEBO
Emitter-Base Voltage
8.0
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N5962
*MMBT5962
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
SOT-23
Mark: 117
MMBT5962
2N5962
C
B
E
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
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