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參數(shù)資料
| 型號(hào)： | 2N5885 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | 2N5885 |
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Military/High-Rel:
N
V(BR)CEO (V):
60
V(BR)CBO (V):
60
I(C) Max. (A):
25
Absolute Max. Power Diss. (W):
200#
Maximum Operating Temp (C):
200
I(CBO) Max. (A):
1.0m
@V(CBO) (V) (Test Condition):
60
V(CE)sat Max. (V):
4.0
@I(C) (A) (Test Condition):
25
@I(B) (A) (Test Condition):
6.25
h(FE) Min. Current gain.:
20
h(FE) Max. Current gain.:
100
@I(C) (A) (Test Condition):
10
@V(CE) (V) (Test Condition):
4.0
f(T) Min. (Hz) Transition Freq:
4.0M
@I(C) (A) (Test Condition):
1.0
@V(CE) (V) (Test Condition):
10
t(r) Max. (s) Rise time:
700n
t(s) Max. (s) Storage time.:
1.0u
t(f) Max. (s) Fall time.:
800n
Package Style:
TO-3
Mounting Style:
T
Junction Temperature
Part Number: 2N5885
2N5885
High- curre nt -
High-po w e r -
High- s pe e d Po w e r Trans is t o r.
6 0 V - 2 0 0 W .
In Stock 272 Brand New Available from $ 4.87
Manufacturer Partnumber:
2N5885
List Price:
$ 6.09
Our Price:
$ 4.87
You Save:
$ 1.22
Americanmicrosemi
Total Price
$ 4.87
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Specifications
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NPN
Power
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2N5885 High-current - High-power - High-speed Power Transistor. 60V ...
http://store.americanmicrosemiconductor.com/2n5885.html
1 of 2
4/13/2010 12:01 AM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5885 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885G | 功能描述:兩極晶體管 - BJT 25A 60V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5886 | 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5886G | 功能描述:兩極晶體管 - BJT 25A 80V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5887 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 7A I(C) | TO-66 |
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