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參數(shù)資料
| 型號(hào)： | 2N5836 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-46 |
| 封裝： | TO-46, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 236K |
| 代理商： | 2N5836 |
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2N5836 Availability
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2N5836 Information
Category Transistors
Type Bipolar PNP
2N5836 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 10
V(BR)CBO (V) : 15
I(C) Max. (A) : 200m
Absolute Max. Power Diss. (W) : 2.0
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 200ю
I(CBO) Max. (A) : 10u
@V(CBO) (V) (Test Condition) : 10
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : 6.0
f(T) Min. (Hz) Transition Freq : 2.0G
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : 6.0
Power Gain Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Noise Figure Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Sem iconductor Material : Silicon
Package Style : TO-46
Mounting Style : T
Description :
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5875/1 | 15 A, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6260 | 3 A, NPN, Si, POWER TRANSISTOR |
| 2N5878 | 7 A, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5875 | 15 A, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N5874 | 7 A, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5837 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5V V(BR)CEO | 300MA I(C) | TO-46 |
| 2N5838 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 3A 3PIN TO-3 - Bulk |
| 2N5839 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 275V 3A 3PIN TO-3 - Bulk |
| 2N5840 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 3A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-3VAR |
| 2N5841 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | TO-72 |
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