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參數(shù)資料
| 型號(hào)： | 2N5832 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN Transistor Plastic-case Bipolar |
| 中文描述： | 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 67K |
| 代理商： | 2N5832 |
2N5832
NPN Transistor
TO-92
Features
Through Hole Package
DIMENSIONS
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
DIM
A
B
C
D
E
G
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage 140
(I
C
=300mAdc)
V
(BR)CBO
Collector-Base Breakdown Voltage 160
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Base Breakdown Current
(V
CE
=120Vdc)
Min
Max
Units
Vdc
Vdc
5.0
Vdc
50
nAdc
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=10mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc)
175
500
V
CE(sat)
0.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=10mAdc)
C
ob
Output Capacitance
NF
Noise Figure
100
MHz
4.0
pF
----
dB
Pin Configuration
Bottom View
C
B
E
A
E
B
C
D
G
www.
mc c semi
.c om
Plastic-case Bipolar
Note
:
Maximum at typical JEDEC condition
V
(BR)CER
@ R=10 OHMS
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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| 2N5837 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5V V(BR)CEO | 300MA I(C) | TO-46 |
| 2N5838 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 3A 3PIN TO-3 - Bulk |
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