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參數(shù)資料
| 型號： | 2N5680 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2N5680 |
TECHNICAL DATA
PNP POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/582
Devices
Qualified Level
2N5679
2N5680
JAN
JANTX
JANTXV
MAXIMUM RATINGS (TA = 25
0C unless otherwise noted)
Ratings
Symbol
2N5679
2N5680
Unit
Collector-Emitter Voltage
VCEO
100
120
Vdc
Collector-Base Voltage
VCBO
100
120
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Collector Current
IC
1.0
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
1.0
10
1.0
10
W
Operating & Storage Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
17.5
0C
1) Derate linearly 5.7 mW/
0C for TA > +250C
2) Derate linearly 57 mW/
0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5679
2N5680
V(BR)CEO
100
120
Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
1.0
Adc
Collector-Emitter Cutoff Current
VCE = 70 Vdc
2N5679
VCE = 80 Vdc
2N5680
ICEO
10
Adc
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc
VCE = 100 Vdc
2N5679
VCE = 120 Vdc
2N5680
ICEX
100
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-39*
(TO-205AD)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5680 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5681 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5681SMD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
| 2N5682 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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