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參數(shù)資料
| 型號(hào)： | 2N5680 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Silicon PNP Transistor(硅PNP晶體管) |
| 中文描述： | 硅PNP晶體管（硅晶體管進(jìn)步黨） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2N5680 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
for
2N5679
V
CE
= -100 V
for
2N5680
V
CE
= -120 V
T
c
= 150
o
C
for
2N5679
V
CE
= -100 V
for
2N5680
V
CE
= -120 V
for
2N5679
V
CB
= -100 V
for
2N5680
V
CB
= -120 V
for
2N5679
V
CB
= -70 V
for
2N5680
V
CB
= -80 V
-1
-1
-1
-1
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
I
CBO
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
-1
-1
I
CEO
-10
-10
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EB
= -4 V
-1
I
C
= -10 mA
for
2N5679
for
2N5680
-100
-120
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -250 mA I
B
= -25 mA
I
C
= -500 mA I
B
= -50 mA
I
C
= -1 A I
B
= -200 mA
I
C
= -250 mA V
CE
= -2 V
I
C
= -250 mA V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
I
C
= -0.2 A V
CE
= -1.5 V f = 1KHz
-0.6
-1
-2
V
V
V
V
BE
h
FE
Base-Emitter Voltage
-1
V
DC Current Gain
40
5
150
h
fe
Small Signal Current
Gain
Transition frequency
40
f
T
I
C
= -100 mA V
CE
= -10 V f =10MHz
I
E
= 0 V
CB
= -20 V f = 1MHz
30
MHz
C
CBO
Collector Base
Capacitance
50
pF
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
2N5680
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5680 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5681 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5681SMD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
| 2N5682 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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