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參數(shù)資料
| 型號(hào)： | 2N5667S |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 |
| 中文描述： | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2N5667S |
TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 455
Devices
Qualified Level
Devices
Qualified Level
JAN
JANTX
JANTXV
JANS
2N5664
2N5665
JAN
JANTX
JANTXV
2N5666
2N5666S
2N5667
2N5667S
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N5664
2N5666, S
200
250
2N5665
2N5667, S
300
400
6.0
1.0
5.0
2N5666, S
2N5667, S
1.2
(2)
15
(4)
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
2N5664
2N5665
2.5
(1)
30
(3)
Total Power Dissipation
Operating & Storage Junction Temperature Range
1) Derate linearly 14.3 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 6.9 mW/
0
C for T
A
> +25
0
C
3) Derate linearly 300 mW/
0
C for T
C
>+100
0
C
4) Derate linearly 150 mW/
0
C for T
C
> +100
0
C
@ T
A
= +25
0
C
@ T
C
= +100
0
C
P
T
W
W
0
C
T
J
,
T
stg
TO-66* (TO-213AA)
2N5664, 2N5665
TO-5*
2N5666, 2N5667
TO-39* (TO-205AD)
2N5666S, 2N5667S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Emitter-Base Breakdown Voltage
I
E
= 10
μ
Adc
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc
V
CE
= 300 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N5664, 2N5666, S
2N5665, 2N5667, S
V
(BR)
CER
250
400
6.0
Vdc
V
(BR)
EBO
I
CES
Vdc
μ
Adc
2N5664, 2N5666, S
2N5665, 2N5667, S
0.2
0.2
120101
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