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參數(shù)資料
| 型號： | 2N5666 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 202K |
| 代理商： | 2N5666 |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5666
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CER
IC = 10 A, RBE = 100
250
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A
6
Volts
Collector-Base Cutoff Current
ICBO1
VCB = 200 Volts
100
nA
Collector-Emitter Cutoff Current
ICES1
VCE = 200 Volts
VCE = 200 Volts, TA = 150°C
200
100
nA
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 0.5 A, VCE = 2 Volts
IC = 1 A, VCE = 5 Volts
IC = 3 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
TA = -55°C
40
15
5
15
120
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 3 A, IB = 300 mA
IC = 5 A, IB = 1 A
1.2
1.5
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC B = 300 mA
IC = 5 A, IB = 1 A
0.4
1.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
2
7
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
120
pF
Switching Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Turn-On Time
tON
IC = 1 A, VCC = 100 Volts
0.25
s
Turn-Off Time
tOFF
IC = 1 A, VCC = 100 Volts
1.5
s
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