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參數(shù)資料
| 型號： | 2N5655 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-08, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 176K |
| 代理商： | 2N5655 |
1
Motorola Bipolar Power Transistor Device Data
Plastic NPN Silicon
High-Voltage Power Transistor
. . . designed for use in line–operated equipment such as audio output amplifiers;
low–current, high–voltage converters; and AC line relays.
Excellent DC Current Gain — hFE = 30–250 @ IC = 100 mAdc
Current–Gain — Bandwidth Product —
fT = 10 MHz (Min) @ IC = 50 mAdc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5655
2N5656
2N5657
Unit
Collector–Emitter Voltage
VCEO
250
300
350
Vdc
Collector–Base Voltage
VCB
275
325
375
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
Peak
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
20
0.16
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
6.25
_C/W
(1) Indicates JEDEC Registered Data.
40
0
25
50
75
100
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
30
20
10
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
Figure 2. Sustaining Voltage Test Circuit
50 mH
200
50 V
+
–
+
X
Y
TO SCOPE
Hg RELAY
300
1.0
6.0 V
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5655/D
Motorola, Inc. 1995
2N5655
2N5656
2N5657
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
REV 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5655/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic NPN Silicon High-Voltage Power Transistor |
| 2N5655_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic NPN Silicon High−Voltage Power Transistor |
| 2N5655G | 功能描述:兩極晶體管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5656 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2N5657 | 功能描述:兩極晶體管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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