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參數(shù)資料
| 型號(hào)： | 2N5550RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/36頁(yè) |
| 文件大小： | 364K |
| 代理商： | 2N5550RLRE |
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2–59
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2N5550
2N5551
Unit
Collector – Emitter Voltage
VCEO
140
160
Vdc
Collector – Base Voltage
VCBO
160
180
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
V(BR)CEO
140
160
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 Adc, IE = 0 )
2N5550
2N5551
V(BR)CBO
160
180
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
2N5550
(VCB = 120 Vdc, IE = 0)
2N5551
(VCB = 100 Vdc, IE = 0, TA = 100°C)
2N5550
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5551
ICBO
—
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
50
nAdc
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5550
2N5551
*Motorola Preferred Device
*
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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| 2N6426 | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5550RLRP | 功能描述:兩極晶體管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5550RLRPG | 功能描述:兩極晶體管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5550S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N5550S_99 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N5550TA | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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