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參數(shù)資料
| 型號(hào)： | 2N5485-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2N5485-E3 |
2N/SST5484 Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
300_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 150_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484
2N5485
2N5486
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = 1 mA , VDS = 0 V
35
25
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 15 V, ID = 10 nA
0.3
3
0.5
4
2
6
V
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
1
5
4
10
8
20
mA
Gate Reverse Current
IGSS
VGS = 20 V, VDS = 0 V
0.002
1
nA
Gate Reverse Current
IGSS
TA = 100_C
0.2
200
nA
Gate Operating Currentc
IG
VDG = 10 V, ID = 1 mA
20
pA
Gate-Source
Forward Voltagec
VGS(F)
IG = 10 mA , VDS = 0 V
0.8
V
Dynamic
Common-Source
Forward TransconductanceNO TAG
gfs
VDS = 15 V, VGS = 0 V
3
6
3.5
7
4
8
mS
Common-Source
Output ConductanceNO TAG
gos
VDS = 15 V, VGS = 0 V
f = 1 kHz
50
60
75
mS
Common-Source
Input Capacitance
Ciss
2.2
5
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7
1
pF
Common-Source
Output Capacitance
Coss
1
2
Equivalent Input
Noise Voltagec
en
VDS = 15 V, VGS = 0 V
f = 100 Hz
10
nV
√Hz
High-Frequency
Common-Source
d
Yf(RE)
f = 100 MHz
5.5
2.5
mS
Common-Source
Transconductanced
Yfs(RE)
f = 400 MHz
5.5
3
3.5
mS
Common-Source
d
Y (RE)
VDS = 15 V
f = 100 MHz
45
75
mS
Common-Source
Output Conductanced
Yos(RE)
VDS = 15 V
VGS = 0 V
f = 400 MHz
65
100
mS
Common-Source
d
Yi(RE)
f = 100 MHz
0.05
0.1
mS
Common-Source
Input Conductanced
Yis(RE)
f = 400 MHz
0.8
1
mS
CS
P
G i d
G
VDS = 15 V, ID = 1 mA
f = 100 MHz
20
16
25
Common-Source Power Gaind
Gps
VDS = 15 V
f = 100 MHz
21
18
30
18
30
VDS = 15 V
ID = 4 mA
f = 400 MHz
13
10
20
10
20
VDS = 15 V, VGS = 0 V
RG = 1 MW, f = 1 kHz
0.3
2.5
dB
Noise Figured
NF
VDS = 15 V, ID = 1 mA
RG = 1 kW, f = 100 MHz
2
3
g
VDS = 15 V
ID = 4 mA
f = 100 MHz
1
2
ID = 4 mA
RG = 1 kW
f = 400 MHz
2.5
4
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N5485G | 功能描述:JFET SS JFET NCH 25V RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5486 | 功能描述:JFET N-Chan JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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