參數(shù)資料
型號(hào)： 2N5484RL1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 8/38頁(yè)
文件大小： 464K
代理商： 2N5484RL1
Surface Mount Information
7–10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING SURFACE MOUNT PACKAGES
RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection inter-
face between the board and the package. With the correct
pad geometry, the packages will self align when subjected to
a solder reflow process.
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
The power dissipation for a surface mount device is a func-
tion of the drain/collector pad size. These can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a surface
mount device is determined by TJ(max), the maximum rated
junction temperature of the die, R
θJA, the thermal resistance
from the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
PD =
TJ(max) – TA
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device. For example,
for a SOT–223 device, PD is calculated as follows.
PD =
150
°C – 25°C
156
°C/W
= 800 milliwatts
The 156
°C/W for the SOT–223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
are other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the
area of the drain/collector pad. By increasing the area of the
drain/collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board
which can defeat the purpose of using surface mount
technology. For example, a graph of R
θJA versus drain pad
area is shown in Figure 1.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
T
O
AMBIENT
(
C/W)°
R
JA
,THERMAL
RE
S
IS
TANCE
,J
U
NCTI
O
N
θ
0.8 Watts
1.25 Watts*
1.5 Watts
A, AREA (SQUARE INCHES)
0.0
0.2
0.4
0.6
0.8
1.0
160
140
120
100
80
Board Material = 0.0625
″
G–10/FR–4, 2 oz Copper
TA = 25°C
*Mounted on the DPAK footprint
Figure 1. Thermal Resistance versus Drain Pad
Area for the SOT–223 Package (Typical)
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SOT–23, SC–59, SC–70/SOT–323, SC–90/SOT–416,
SOD–123, SOT–223, SOT–363, SO–14, SO–16, and
TSOP–6 packages, the stencil opening should be the same
as the pad size or a 1:1 registration.
相關(guān)PDF資料
PDF描述
2N5484 Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2N5485 Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2N5484 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
2N4416 Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72
2N5485 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5485 功能描述:JFET N-Chan JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5485_D26Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
2N5485_D26Z_Q 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
2N5485_D27Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
2N5485_D74Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
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