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參數(shù)資料
| 型號： | 2N5484 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel JFET High Frequency Amplifier |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2N5484 |
2N/SST5484 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70246
S-04028
—
Rev. E, 04-Jun-01
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
25 V
10 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
65 to 150 C
Operating Junction Temperature
–
55 to 150 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
Notes
a.
Derate 2.8 mW/ C above 25 C
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limits
2N5484
2N5485
2N5486
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
=
–
1 A , V
DS
= 0 V
–
35
–
25
–
25
–
25
V
Gate-Source Cutoff Voltage
Saturation Drain Current
b
V
GS(off)
I
DSS
V
DS
= 15 V, I
D
= 10 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
=
–
20 V, V
DS
= 0 V
–
0.3
–
3
–
0.5
–
4
–
2
–
6
1
5
4
10
8
20
mA
–
0.002
–
1
–
1
–
1
Gate Reverse Current
I
GSS
T
A
= 100 C
–
0.2
–
200
–
200
–
200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA
–
20
pA
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.8
V
Dynamic
Common-Source
Forward Transconductance
b
g
fs
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
3
6
3.5
7
4
8
mS
Common-Source
Output Conductance
b
g
os
50
60
75
S
Common-Source
Input Capacitance
C
iss
2.2
5
5
5
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
= 0 V
f = 1 MHz
0.7
1
1
1
pF
Common-Source
Output Capacitance
C
oss
1
2
2
2
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 15 V, V
= 0 V
f = 100 Hz
10
nV
√
Hz
High-Frequency
Common-Source
Transconductance
f = 100 MHz
5.5
2.5
Y
fs(RE)
f = 400 MHz
5.5
3
3.5
mS
Common-Source
Output Conductance
V
DS
= 15 V
V
GS
= 0 V
f = 100 MHz
45
75
Y
os(RE)
f = 400 MHz
65
100
100
S
Common-Source
Input Conductance
f = 100 MHz
0.05
0.1
Y
is(RE)
f = 400 MHz
0.8
1
1
mS
V
DS
= 15 V, I
= 1 mA
f = 100 MHz
20
16
25
Common-Source Power Gain
G
ps
V
DS
= 15 V
I
D
= 4 mA
f = 100 MHz
21
18
30
18
30
f = 400 MHz
13
10
20
10
20
V
DS
= 15 V, V
= 0 V
R
G
= 1 M
V
DS
= 15 V, I
= 1 mA
R
G
= 1 k
V
DS
= 15 V
I
D
= 4 mA
R
G
= 1 k
, f = 1 kHz
0.3
2.5
2.5
2.5
dB
Noise Figure
NF
, f = 100 MHz
2
3
f = 100 MHz
1
2
2
f = 400 MHz
2.5
4
4
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