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參數(shù)資料
| 型號： | 2N5460 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Depletion JFET Amplifier(P溝道耗盡型結(jié)型場效應管放大器) |
| 中文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | CASE 29-11, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 73K |
| 代理商： | 2N5460 |
Semiconductor Components Industries, LLC, 2004
May, 2004 Rev. 4
1
Publication Order Number:
2N5460/D
2N5460, 2N5461, 2N5462
JFET Amplifier
PChannel Depletion
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Gate Voltage
V
DG
40
Vdc
Reverse Gate Source Voltage
V
GSR
40
Vdc
Forward Gate Current
I
G(f)
10
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
350
2.8
mW
mW/
°
C
Junction Temperature Range
T
J
65 to +135
°
C
Storage Channel Temperature Range
T
stg
65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
2N54xx
Y
WW
= Year
= Work Week
YWW
MARKING DIAGRAM
TO92
CASE 29
STYLE 7
123
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
*For additional information on our PbFree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2 DRAIN
1 SOURCE
3
GATE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5461 | P-Channel Depletion JFET Amplifier(P溝道耗盡型結(jié)型場效應管放大器) |
| 2N5462 | P-Channel Depletion JFET Amplifier(P溝道耗盡型結(jié)型場效應管放大器) |
| 2N5460 | P-Channel General Purpose Amplifier(P溝道通用放大器) |
| 2N5461 | P-Channel General Purpose Amplifier(P溝道通用放大器) |
| 2N5462 | P-Channel General Purpose Amplifier(P溝道通用放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5460/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:JFET Amplifier P-Channel |
| 2N5460_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET Amplifier P−Channel − Depletion |
| 2N5460_D27Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5460_D74Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5460_D75Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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