參數(shù)資料
型號(hào): 2N5197
廠商: Vishay Intertechnology,Inc.
英文描述: Monolithic N-Channel JFET Duals
中文描述: 單片N溝道場(chǎng)效應(yīng)偶
文件頁數(shù): 2/6頁
文件大?。?/td> 59K
代理商: 2N5197
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-2
Document Number: 70252
S-04031
Rev. D, 04-Jun-01
Limits
2N5196
2N5197
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
V
GS(off)
I
G
=
1 A, V
DS
= 0 V
V
DS
= 20 V, I
D
= 1 nA
57
50
50
Gate-Source Cutoff Voltage
2
0.7
4
0.7
4
V
Saturation Drain Current
b
I
DSS
V
DS
= 20 V, V
GS
= 0 V
3
0.7
7
0.7
7
mA
V
GS
=
30 V, V
DS
= 0 V
10
25
25
pA
Gate Reverse Current
I
GSS
T
A
= 150 C
20
50
50
nA
V
DG
= 20 V, I
D
= 200 A
5
15
15
pA
Gate Operating Current
I
G
T
A
= 125 C
0.8
15
15
nA
Gate-Source Voltage
V
GS
V
DG
= 20 V, I
D
= 200 A
1.5
0.2
3.8
0.2
3.8
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, V
GS
= 0 V
f = 1 kHz
2.5
1
4
1
4
mS
Common-Source
Output Conductance
g
os
2
50
50
S
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, I
= 200 A
f = 1 kHz
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
g
os
1
4
4
S
Common-Source
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
3
6
6
Common-Source
Reverse Transfer Capacitance
C
rss
1
2
2
pF
Equivalent Input Noise Voltage
e
n
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
9
20
20
nV
Hz
Noise Figure
NF
V
= 20 V, V
= 0 V
f = 100 Hz, R
G
= 10 M
0.5
0.5
dB
Matching
Differential Gate-Source Voltage
|V
GS1
V
GS2
|
V
DG
= 20 V, I
D
= 200 A
5
5
mV
Gate-Source Voltage Differential
Change with Temperature
|V
GS1
V
GS2
|
T
V
DG
= 20 V, I
= 200 A
T
A
=
55 to 125 C
5
10
V/ C
Saturation Drain Current Ratio
I
DSS1
I
DSS2
V
DS
= 20 V, V
GS
= 0 V
0.98
0.95
1
0.95
1
Transconductance Ratio
g
fs1
g
fs2
V
DS
= 20 V, I
= 200 A
f = 1 kHz
0.99
0.97
1
0.97
1
Differential Output Conductance
|g
os1
g
os2
|
0.1
1
1
S
Differential Gate Current
|I
G1
I
G2
|
V
DG
= 20 V, I
D
= 200 A , T
A
= 125 C
0.1
5
5
nA
Common Mode Rejection Ratio
c
CMRR
V
DG
= 10 to 20 V, I
D
= 200 A
100
dB
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