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參數(shù)資料
| 型號： | 2N5192 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Medium Power NPN Silicon Transistors(NPN硅晶體管) |
| 中文描述： | 中功率NPN硅晶體管（npn型硅晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2N5192 |
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2N5191 / 2N5192
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PDF描述 |
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| 2N5195 | Medium Power PNP Silicon Transistor(PNP硅晶體管) |
| 2N5195 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
| 2N5193 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
| 2N5194 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
| 2N5196 | Monolithic N-Channel JFET Duals |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5192 SL H | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件狀態(tài):新產(chǎn)品 標準包裝:50 |
| 2N5192 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-126 |
| 2N5192G | 功能描述:兩極晶體管 - BJT 4A 80V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5192R | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標準包裝:1,000 |
| 2N5193 | 制造商:SPC Multicomp 功能描述:TRANSISTORPNP1A40VTO126 制造商:SPC Multicomp 功能描述:TRANSISTOR,PNP,1A,40V,TO126 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:40W; DC Collector Current:1A; DC Current Gain hFE:100; No. of Pins:3 ;RoHS Compliant: Yes |
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