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參數(shù)資料
| 型號： | 2N5191 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS SILICON NPN |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 65K |
| 代理商： | 2N5191 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
0.1
mA
I
CEX
Collector Cut-off
Current (V
BE
= -1.5V)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
V
CE
= rated V
CEO
0.1
2
mA
mA
I
CEO
1
mA
I
EBO
V
EB
= 5 V
1
mA
I
C
= 100 mA
for
2N5191
for
2N5192
60
80
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1.5 A I
B
= 0.15 A
I
C
= 4 A I
B
= 1 A
I
C
= 1.5 A V
CE
= 2 V
0.6
1.4
V
V
V
BE
h
FE
Base-Emitter Voltage
1.2
V
DC Current Gain
I
C
= 1.5 A V
CE
= 2 V
for
2N5191
for
2N5192
I
C
= 4 A V
CE
= 2 V
for
2N5191
for
2N5192
25
20
10
7
100
80
f
T
Transition frequency
I
C
= 1 A V
CE
= 10 V
2
MHz
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
2N5191 / 2N5192
2/4
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| 2N5195 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5191 | 制造商:UNBRANDED 功能描述:TRANSISTOR, NPN TO-126 |
| 2N5191/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN Power Transistors |
| 2N5191_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEDIUM POWER NPN SILICON TRANSISTORS |
| 2N5191_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NPN power transistors |
| 2N5191G | 功能描述:兩極晶體管 - BJT 4A 60V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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