參數(shù)資料
型號(hào): 2N5153J
廠商: SEMICOA CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: HERMETIC SEALED, METAL CAN-3
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 407K
代理商: 2N5153J
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5153
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 100 mA
80
Volts
Collector-Emitter Cutoff Current
ICES1
VCE = 60 Volts
1
A
Collector-Emitter Cutoff Current
ICES2
VCE = 100 Volts
1
mA
Collector-Emitter Cutoff Current
ICEO
VCE = 40 Volts
50
A
Collector-Emitter Cutoff Current
ICEX
VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C
500
nA
Emitter-Base Cutoff Current
IEBO1
VEB = 4 Volts
1
A
Emitter-Base Cutoff Current
IEBO1
VEB = 5.5 Volts
1
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
50
70
40
25
200
Base-Emitter Voltage
VBE
VCE = 5 Volts, IC = 2.5 mA
1.45
Volts
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
0.75
1.50
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
7
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 5 Volts, IC = 100 mA,
f = 1 kHz
50
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
f = 1 MHz
250
pF
Switching Characteristics
Saturated Turn-On Time
Storage Time
Fall Time
Saturated Turn-Off Time
tON
ts
tf
tOFF
IC = 5 A, IB1= 500 mA,
IB2= -500 mA, VBEoff = 3.7 V,
RL = 6
0.5
1.4
0.5
1.5
s
Semicoa Corporation
Copyright
2010
相關(guān)PDF資料
PDF描述
2N5153SMD05-JQR-BR4 5000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5153SMD05 5000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5151SMD05 5000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N5153U3 5 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AB
2N5153 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5153JANS 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39
2N5153JANTX 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39
2N5153JANTXV 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39
2N5153L 制造商:SEMICOA 制造商全稱(chēng):SEMICOA 功能描述:Silicon PNP Transistor
2N5153L_02 制造商:SEMICOA 制造商全稱(chēng):SEMICOA 功能描述:Silicon PNP Transistor