參數(shù)資料
型號(hào): 2N5151L
廠商: MICROSEMI CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
封裝: HERMETIC SEALED, METAL CAN-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 203K
代理商: 2N5151L
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5151L
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5151LJ)
JANTX level (2N5151LJX)
JANTXV level (2N5151LJV)
JANS level (2N5151LJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power switching
Low power
PNP silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 9702
Reference document:
MIL-PRF-19500/545
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
100
Volts
Emitter-Base Voltage
VEBO
5.5
Volts
Collector Current, Continuous
IC
2
A
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
1
5.7
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
11.8
66.7
W
mW/
°C
Thermal Resistance
RθJA
RθJC
175
15
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
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