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參數(shù)資料
| 型號(hào)： | 2N5115 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel JFET(最大導(dǎo)通電阻100Ω，夾斷電流-10pA的P溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | P溝道場(chǎng)效應(yīng)（最大導(dǎo)通電阻100Ω，夾斷電流，10pA的P溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | 2N5115 |
2N5114/5115/5116
Siliconix
P-37410—Rev. D, 04-Jul-94
1
P-Channel JFETs
Product Summary
Part Number
V
GS(off)
(V)
r
DS(on)
Max ( )
I
D(off)
Typ (pA)
t
ON
Max (ns)
2N5114
5 to 10
75
–10
16
2N5115
3 to 6
100
–10
30
2N5116
1 to 4
150
–10
42
Features
Low On-Resistance: 2N5114 <75
Fast Switching—t
ON
: 16 ns
High Off-Isolation—I
D(off)
: –10 pA
Low Capacitance: 6 pF
Low Insertion Loss
Benefits
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Applications
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Description
The 2N5114 series consists of p-channel JFET analog
switches designed to provide low on-resistance, good
off-isolation, and fast switching. These JFETs are
optimized for use in complementary switching applications
with the Siliconix 2N4856A series.
The 2N5114 series is available with JAN, JANTX, or
JANTXV level processing, (see 2N5114 JAN series data
sheet).
TO-206AA
(TO-18)
S
D
Top View
G
Case
1
2
3
Absolute Maximum Ratings
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Storage Temperature
Operating Junction Temperature
30 V
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
–50 mA
–65 to 200 C
–55 to 200 C
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
. . . . . . . . . . . . . . .
500 mW
Notes
a.
Derate 3 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70260.
Applications information may also be obtained via FaxBack, request document #70597.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5133 | TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 50MA I(C) | TO-106 |
| 2N5128 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-105 |
| 2N5135 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-105 |
| 2N5224 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 200MA I(C) | TO-92 |
| 2N5142 | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-105 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5115_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:P-CHANNEL JFET |
| 2N5115E3 | 制造商:Microsemi Corporation 功能描述:TRANS JFET P-CH 30V 3PIN TO-18 - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N5115-E3 | 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5115JAN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel JFETs |
| 2N5115JAN02 | 制造商:Vishay Angstrohm 功能描述:P-CH JFET TO-18 100 OHM SWITCH |
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