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參數(shù)資料
| 型號(hào)： | 2N5089D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 730K |
| 代理商： | 2N5089D27Z |
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2N5088
2N5089
MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
A to 50 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
2N5088
2N5089
30
25
V
VCBO
Collector-Base Voltage
2N5088
2N5089
35
30
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5088
2N5089
*MMBT5088
*MMBT5089
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5088
/
MMBT5088
/
2N5089
/
MMBT5089
2N5088/2N5089/MMBT5088/MMBT5089, Rev A
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| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3704 | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5089-J60Z | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5089G | 功能描述:兩極晶體管 - BJT 50mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5089G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5089G-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5089G-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5089L-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
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