參數(shù)資料
型號(hào)： 2N5064
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類： 晶閘管
英文描述： 0.8 to 110 Amperes RMS 15 to 1200 Volts
中文描述： 0.8 A, 200 V, SCR, TO-92
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 199K
代理商： 2N5064
Data Sheets
Sensitive SCRs
2004 Littelfuse, Inc.
Thyristor Product Catalog
E5 - 5
http://www.littelfuse.com
+1 972-580-7777
Electrical Specifications Notes
(1)
See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2)
(3)
See Figure E5.10 for I
GT
versus T
C
or T
L
.
See Figure E5.11 for instantaneous on-state current (i
T
) versus on-
state voltage (v
T
) TYP.
See Figure E5.12 for V
GT
versus T
C
or T
L
.
See Figure E5.13 for I
H
versus T
C
or T
L
.
For more than one full cycle, see Figure E5.14.
0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 μs minimum,
15 μs maximum. See Figure E5.20 and Figure E5.21.
See Figure E5.15 for t
gt
versus I
GT
.
Test conditions as follows:
– T
C
or T
L
≤
80 °C, rectangular current waveform
– Rate-of-rise of current
≤
10 A/μs
– Rate-of-reversal of current
≤
5 A/μs
– I
TM
= 1 A (50 μs pulse), Repetition Rate = 60 pps
– V
RRM
= Rated
– V
R
= 15 V minimum, V
DRM
= Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/μs
– Gate Bias = 0 V, 100
(during turn-off time interval)
(4)
(5)
(6)
(7)
(8)
(9)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 A
PK
; T106/T107 devices are 4 A
PK
.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) V
D
= 6 V dc, R
L
= 100
(See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) I
GT
= 500 μA maximum at T
C
= -40 °C for T106 devices
(15) I
H
= 10 mA maximum at T
C
= -65 °C for 2N5064 Series and
2N6565 Series devices
(16) I
H
= 6 mA maximum at T
C
= -40 °C for T106 devices
(17) Pulse Width
≤
10 μs
(18) I
GT
= 350 μA maximum at T
C
= -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher I
GT
types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) T
C
or T
L
= T
J
for test conditions in off state
(21) I
DRM
and I
RRM
= 50 μA for 2N5064 and 100 μA for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) T
C
= 110 °C
V
GT
I
H
I
GM
(17)
V
GRM
P
GM
(17)
P
G(AV)
I
TSM
(6) (13)
dv/dt
di/dt
t
gt
(8)
t
q
(9)
l
2
t
(4) (12) (22)
Volts
T
C
=
25 °C
MAX
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
(5) (19)
mAmps
MAX
6
6
6
8
8
8
6
6
6
8
8
8
6
6
6
8
8
8
Amps
Volts
MIN
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
Watts
Watts
Amps
60/50 Hz
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
Volts/μSec
Amps/μSec
μSec
TYP
4
4
4
5
5
5
4
4
4
5
5
5
4
4
4
5
5
5
μSec
MAX
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
Amps
2
Sec
T
C
=
-40 °C
T
C
=
110 °C
T
C
= 110 °C
TYP
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5064,112 功能描述:SCR BULK SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N5064G 功能描述:SCR THY 0.8A 200V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N5064RLRA 功能描述:SCR 200V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N5064RLRAG 功能描述:SCR 200V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N5064RLRM 功能描述:SCR 200V 800mA Thyristor RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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