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參數(shù)資料
| 型號(hào)： | 2N4957UB |
| 廠商： | SEMICOA CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERSOT-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 233K |
| 代理商： | 2N4957UB |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N4957UB
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1 mA
30
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 20 Volts
VCB = 30 Volts
VCB = 20 Volts, TA = 150°C
100
nA
A
Emitter-Base Cutoff Current
IEBO1
VEB = 3 Volts
100
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.5 mA, VCE = 10 Volts
IC = 2 mA, VCE = 10 Volts
IC = 5 mA, VCE = 10 Volts
TA = -55°C
15
20
30
10
165
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 2 mA,
f = 100 MHz
12
36
Common-Emitter small signal power
gain
GPE
IC = 2 mA, VCE = 10 Volts,
f = 450 MHz
17
25
dB
Noise Figure
NF
VCE = 10 Volts, IC = 2 mA,
f = 450 MHz, RL = 50
3.5
dB
Collector Base time constant
rb’CC
VCB = 10 Volts, IE = 2 mA,
f = 63.6 MHz
1
8
ps
Collector Base feedback capacitance
Ccb
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
0.8
pF
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