參數(shù)資料
型號(hào): 2N4403
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Small Signal Transistors TO-92 Case (Continued)
中文描述: 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 98K
代理商: 2N4403
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
.MAX.
UNIT
Collector-Base Breakdown Voltage
at DI
C
= 0.1 mA, I
E
= 0
DV
(BR)CBO
40
D
Volts
Collector-Emitter Breakdown Voltage
(1)
at DI
C
= 1 mA, I
B
= 0
DV
(BR)CEO
40
D
Volts
Emitter-Base Breakdown Voltage
at DI
E
= 0.1 mA, I
C
= 0
DV
(BR)EBO
5.0
D
Volts
Collector-Emitter Saturation Voltage
(1)
at DI
C
= 150 mA, DI
B
= 15 mA
at DI
C
= 500 mA, DI
B
= 50 mA
DV
CEsat
DV
CEsat
D
D
0.40
0.75
Volts
Volts
Base-Emitter Saturation Voltage
(1)
at DI
C
= 150 mA, DI
B
= 15 mA
at DI
C
= 500 mA, DI
B
= 50 mA
DV
BEsat
DV
BEsat
0.75
D
0.95
1.30
Volts
Volts
Collector Cutoff Current
at DV
EB
= 0.4 V, DV
CE
= 35 V
DI
CEX
D
100
nA
Base Cutoff Current
at DV
EB
= 0.4 V, DV
CE
= 35 V
DI
BEV
D
100
nA
DC Current Gain
at DV
CE
= 1 V, DI
C
= 0.1 mA
at DV
CE
= 1 V, DI
C
= 1 mA
at DV
CE
= 1 V, DI
C
= 10 mA
at DV
CE
= 2 V, DI
C
= 150 mA
(1)
at DV
CE
= 2 V, DI
C
= 500 mA
(1)
h
FE
h
FE
h
FE
h
FE
h
FE
30
60
100
100
20
D
D
D
D
D
D
D
D
300
D
Input Impedance
at DV
CE
= 10 V, DI
C
= 1 mA, f = 1 kH
Z
h
ie
1.5
15
k
W
Voltage Feedback Ratio
at DV
CE
= 10 V, DI
C
= 1 mA, f = 1 kH
Z
h
re
0.1 á 10
D4
8 á 10
D4
D
Current Gain-Bandwidth Product
at DV
CE
= 10 V, DI
C
= 20 mA, f = 100 MH
Z
f
T
200
D
MHz
Collector-Base Capacitance
at DV
CB
= 10 V, I
E
=0, f = 1.0 MH
Z
C
CB
D
8.5
pF
Emitter-Base Capacitance
at DV
EB
= 0.5 V, I
C
=0, f = 1.0 MH
Z
C
EB
D
30
pF
NOTES
(1) Pulse test: Pulse width 2 300
m
s - Duty cycle 2 2%
2N4403
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