參數(shù)資料
型號(hào)： 2N4403-T92-K
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 小信號(hào)晶體管
英文描述： PNP GENERAL PURPOSE AMPLIFIER
中文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： TO-92, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 117K
代理商： 2N4403-T92-K
2N4403
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R201-053,C
2 of 5
ABS OLUT E MAX IMUM RAT ING
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
40
40
5
600
625
5.0
150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25
Junction Temperature
Storage Temperature
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
P
C
T
J
T
STG
T HERMAL DAT A
(Ta=25
, unless otherwise specified)
CHARACTERISTIC
SYMBOL
θ
JA
θ
JC
RATINGS
200
83.3
UNIT
/W
/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS*
BV
CEO
I
C
=1mA, I
B
=0
40
V
BV
CBO
BV
EBO
I
CEX
I
BEX
Ic=0.1mA,IE=0
I
E
=0.1mA, I
C
=0
V
CE
=35V, V
EB
=0.4V
V
CE
=35V, V
BE
=0.4V
40
5
V
V
μA
μA
0.1
0.1
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(SAT1)
V
CE(SAT2
)
V
BE(SAT1)
V
BE(SAT2
)
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=2V, I
C
=150mA (Note)
V
CE
=2V, I
C
=500mA (Note)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA(Note)
I
C
=500mA, I
B
=50mA
30
60
100
100
20
0.75
300
0.4
0.75
0.95
1.3
DC Current Gain
V
V
V
V
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
f
T
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
=10V, I
E
=0, f=140kHz
V
BE
=0.5V, I
C
=0, f=140kHz
V
CE
=10V, I
C
=1mA, f=1kHz
V
CE
=10V, I
C
=1mA, f=1kHz
V
CE
=10V, I
C
=1mA, f=1kHz
V
CE
=10V, I
C
=1mA, f=1kHz
200
1.5
0.1
60
1.0
MHz
pF
pF
k
×10
-4
Ccb
Ceb
h
IE
h
RE
h
FE
h
OE
8.5
30
15
8
500
100
μmbos
t
D
t
R
t
S
t
F
15
20
225
30
ns
ns
ns
ns
V
CC
=30V, I
C
=150mA I
B
1=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
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2N4403TAR 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4403TF 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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