參數(shù)資料
型號： 2N4401L-T92-K
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 小信號晶體管
英文描述： NPN GENERAL PURPOSE AMPLIFIER
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： LEAD FREE PACKAGE-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 126K
代理商： 2N4401L-T92-K
2N4401
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R201-052,B
2 of 6
ABS OLUT E MAX IMUM RAT ING
(Ta=25
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25
Junction Temperature
Storage Temperature
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T HERMAL DAT A
(Ta=25
, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=0.1mA, I
E
=0
Collector-Emitter Breakdown Voltage (note)
BV
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=0.1mA, I
C
=0
Collector Cut-off Current
I
CEX
V
CE
=35V, V
EB
=0.4V
Base Cut-off Current
I
BL
V
CE
=35V, V
EB
=0.4V
ON CHARACTERISTICS
(note)
h
FE1
V
CE
=1V, I
C
=0.1mA
h
FE2
V
CE
=1V, I
C
=1mA
h
FE3
V
CE
=1V, I
C
=10mA
h
FE4
V
CE
=1V, I
C
=150mA
h
FE5
V
CE
=2V, I
C
=500mA
V
CE(SAT1
)
V
CE(SAT2)
I
C
=500mA, I
B
=50mA
V
BE(SAT1)
V
BE(SAT2)
I
C
=500mA, I
B
=50mA
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=20mA, f=100MHz
Collector-Base Capacitance
C
cb
V
CB
=5V, I
E
=0, f=140kHz
Emitter-Base Capacitance
C
eb
V
BE
=0.5V, I
C
=0, f=140kHz
Input Impedance
hie
V
CE
=10V, I
C
=1mA, f=1kHz
Voltage Feedback Ratio
hre
V
CE
=10V, I
C
=1mA, f=1kHz
Small-Signal Current Gain
hfe
V
CE
=10V, I
C
=1mA, f=1kHz
Output Admittance
hoe
V
CE
=10V, I
C
=1mA, f=1kHz
SWITCHING CHARACTERISTICS
V
CC
=30V, V
EB
=2V
I
C
=150mA I
B1
=15mA
V
CC
=30V, V
EB
=2V
I
C
=150mA I
B1
=15mA
Storage Time
t
S
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
Note: Pulse test: PulseWidth
≤
300
μ
s, Duty Cycle
≤
2%
, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
60
40
6
600
625
5.0
+150
-40 ~ +150
UNIT
V
V
V
mA
mW
mW/
P
D
T
J
T
STG
SYMBOL
θ
JA
θ
JC
, unless otherwise specified)
TEST CONDITIONS
RATING
200
83.3
UNIT
/W
/W
MIN
TYP
MAX
UNIT
60
40
6
V
V
V
μA
μA
20
40
80
100
40
300
0.4
0.75
0.95
1.2
DC Current Gain
Collector-Emitter Saturation Voltage
I
C
=150mA, I
B
=15mA
V
V
V
V
Base-Emitter Saturation Voltage
I
C
=150mA, I
B
=15mA
0.75
250
1
0.1
40
1
MHz
pF
pF
k
×10
-4
μmhos
6.5
30
15
8
500
30
Delay Time
t
D
15
ns
Rise Time
t
R
20
ns
225
ns
Fall Time
t
F
30
ns
相關PDF資料
PDF描述
2N4401-T92-B NPN GENERAL PURPOSE AMPLIFIER
2N4401-T92-K NPN GENERAL PURPOSE AMPLIFIER
2N4401 NPN switching transistor( NPN開關晶體管)
2N4401 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2n4401 TO-92 Plastic-Encapsulated Transistors
相關代理商/技術參數(shù)
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