參數(shù)資料
型號(hào)： 2N4401-T92-B
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 小信號(hào)晶體管
英文描述： NPN GENERAL PURPOSE AMPLIFIER
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 126K
代理商： 2N4401-T92-B
2N4401
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R201-052,B
2 of 6
ABS OLUT E MAX IMUM RAT ING
(Ta=25
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25
Junction Temperature
Storage Temperature
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T HERMAL DAT A
(Ta=25
, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=0.1mA, I
E
=0
Collector-Emitter Breakdown Voltage (note)
BV
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=0.1mA, I
C
=0
Collector Cut-off Current
I
CEX
V
CE
=35V, V
EB
=0.4V
Base Cut-off Current
I
BL
V
CE
=35V, V
EB
=0.4V
ON CHARACTERISTICS
(note)
h
FE1
V
CE
=1V, I
C
=0.1mA
h
FE2
V
CE
=1V, I
C
=1mA
h
FE3
V
CE
=1V, I
C
=10mA
h
FE4
V
CE
=1V, I
C
=150mA
h
FE5
V
CE
=2V, I
C
=500mA
V
CE(SAT1
)
V
CE(SAT2)
I
C
=500mA, I
B
=50mA
V
BE(SAT1)
V
BE(SAT2)
I
C
=500mA, I
B
=50mA
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=20mA, f=100MHz
Collector-Base Capacitance
C
cb
V
CB
=5V, I
E
=0, f=140kHz
Emitter-Base Capacitance
C
eb
V
BE
=0.5V, I
C
=0, f=140kHz
Input Impedance
hie
V
CE
=10V, I
C
=1mA, f=1kHz
Voltage Feedback Ratio
hre
V
CE
=10V, I
C
=1mA, f=1kHz
Small-Signal Current Gain
hfe
V
CE
=10V, I
C
=1mA, f=1kHz
Output Admittance
hoe
V
CE
=10V, I
C
=1mA, f=1kHz
SWITCHING CHARACTERISTICS
V
CC
=30V, V
EB
=2V
I
C
=150mA I
B1
=15mA
V
CC
=30V, V
EB
=2V
I
C
=150mA I
B1
=15mA
Storage Time
t
S
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
Note: Pulse test: PulseWidth
≤
300
μ
s, Duty Cycle
≤
2%
, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
60
40
6
600
625
5.0
+150
-40 ~ +150
UNIT
V
V
V
mA
mW
mW/
P
D
T
J
T
STG
SYMBOL
θ
JA
θ
JC
, unless otherwise specified)
TEST CONDITIONS
RATING
200
83.3
UNIT
/W
/W
MIN
TYP
MAX
UNIT
60
40
6
V
V
V
μA
μA
20
40
80
100
40
300
0.4
0.75
0.95
1.2
DC Current Gain
Collector-Emitter Saturation Voltage
I
C
=150mA, I
B
=15mA
V
V
V
V
Base-Emitter Saturation Voltage
I
C
=150mA, I
B
=15mA
0.75
250
1
0.1
40
1
MHz
pF
pF
k
×10
-4
μmhos
6.5
30
15
8
500
30
Delay Time
t
D
15
ns
Rise Time
t
R
20
ns
225
ns
Fall Time
t
F
30
ns
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2N4401TA_Q 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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