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參數(shù)資料
| 型號： | 2N4393 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最大導(dǎo)通電阻100Ω，夾斷電流5pA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最大導(dǎo)通電阻100Ω，夾斷電流5pA的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2N4393 |
2N/PN/SST4391 Series
Siliconix
E-77090—Rev. E, 11-Aug-97
5
Typical Characteristics (Cont’d)
Noise Voltage vs. Frequency
100
10
1
10
100
1 k
100 k
10 k
V
DS
= 10 V
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
40
0
0
–2
–10
500
200
0
g
f
Gate Leakage Current
0
30
–
I
G
T
A
= 125 C
T
A
= 25 C
Common-Gate Input Admittance
100
10
1
0.1
100
1000
200
500
(
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
Common-Gate Forward Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
Common-Gate Reverse Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
100
10
1
0.1
100
1000
200
500
(
10
1.0
0.1
0.01
100
1000
200
500
(
V
DG
– Drain-Gate Voltage (V)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
f – Frequency (Hz)
f – Frequency (MHz)
f – Frequency (MHz)
f – Frequency (MHz)
30
20
10
–4
–6
–8
I
GSS
@ 125 C
6
12
18
24
400
200
100
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
I
D
= 1 mA
I
D
= 10 mA
g
fs
g
os
1 mA
I
GSS
@ 25 C
I
D
= 10 mA
g
ig
b
ig
–g
fg
b
fg
g
fg
–g
rg
–b
rg
+g
rg
10 mA
I
G(on)
@ I
D
1 mA
S
g
f
n
(
e
n
/
√
)
–
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