參數(shù)資料
型號(hào): 2N4341
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最小柵源擊穿電壓-50V,最大飽和漏極電流9mA的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)(最小柵源擊穿電壓- 50V的最大飽和漏極電流九毫安的N溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁數(shù): 3/6頁
文件大小: 73K
代理商: 2N4341
2N4338/4339/4340/4341
Siliconix
P-37408—Rev. D, 04-Jul-94
3
Specifications
a
for
2N4340
and
2N4341
Limits
2N4340
2N4341
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V V
GS
= 0 V f = 1 kHz
1.3
3
2
4
mS
Common-Source
Output Conductance
g
os
30
60
S
Drain-Source On-Resistance
r
ds(on)
V
DS
= 0 V, V
GS
= 0 V, f = 1 kHz
1500
800
Common-Source
Input Capacitance
C
iss
= 15 V V
= 0 V f = 1 MHz
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5
7
7
pF
Common-Source
Reverse Transfer Capacitance
C
rss
1.5
3
3
Equivalent Input Noise Voltage
d
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
6
nV
Hz
Noise Figure
NF
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz, R
G
= 1 M
1
1
dB
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s, duty cycle
3%.
This parameter not registered with JEDEC.
NPA
Typical Characteristics
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
10
0
8
6
4
2
0
–5
–4
–3
–2
–1
0
18
12
6
24
30
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DG
– Drain-Gate Voltage (V)
I
D
g
f
I
G
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
I
GSS
@ 125 C
I
GSS
@ 25 C
T
A
= 125 C
T
A
= 25 C
500 A
500 A
I
D
= 100 A
I
D
= 100 A
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