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參數(shù)資料
| 型號： | 2N4339-JQR-BG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA |
| 封裝： | HERMETIC SEALED, TO-46, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2N4339-JQR-BG4 |
Underside View
PAD 1 – Source
PAD 2 – Drain
PAD 3 – Gate
LOW NOISE N-CHANNEL JFET
DESIGNED FOR SENSITIVE AMPLIFIER
STAGES IN A HERMETICALLY SEALED
PACKAGE FOR HIGH RELIABILITY
APPLICATIONS
FEATURES
LOW CUTOFF VOLTAGE
HIGH INPUT IMPEDANCE
VERY LOW NOISE
HIGH GAIN
CECC SCREENING OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
High Gain, Low Noise Amplifiers
Low Current, Low Voltage Battery
Powered Amplifiers
Ultrahigh Input Impedance Pre-
Amplifiers
TO-46
(TO-206AA)
MECHANICAL DATA
Dimensions in mm (inches)
2N4339
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3887
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
50V
VDG
Drain – Gate Voltage
50V
VGS
Gate – Source Voltage
50V
IG
Gate Current
50mA
PD
Total Device Dissipation at TAMB = 25°C
300mW
Derate above 25°C
2mW/°C
TJ
Operating Temperature Range
–55 to +175°C
TSTG
Storage Temperature Range
–65 to +200°C
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33
(0
.2
10)
4.
32
(0
.1
70)
12
.7
(
0
.500
)
mi
n.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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| 2N4351 | 30 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF |
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| 2N4358 | 100 mA, 240 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N4391-JQR | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N4391-JQR-BG4 | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4340 | 功能描述:JFET Gen Purp JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4340-E3 | 功能描述:JFET 50V 3.6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4341 | 功能描述:JFET N-Channel JFet General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4341-E3 | 功能描述:JFET 50V 3.6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4342 | 制造商:Motorola 功能描述:2N4342 TO92 MOT N3E7D 制造商:Solid Technology Solutions 功能描述: 制造商:SSI 功能描述: |
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