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參數(shù)資料
| 型號： | 2N4240 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(35W) |
| 中文描述： | 功率晶體管（35W的） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N4240 |
FIGURE 1 – SWITCHING TIME TEST CIRCUIT
2N4240
Prelim. 8/93
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C , unless otherwise stated)
Collector – Emitter
Sustaining Voltage
Collector Cutoff Current
I
CEO
I
CEX
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
I
C
= 200mA , I
B
= 0
V
CE
= 150V , I
B
= 0
V
CE
= 450V , V
BE(off)
= 1.5V
V
CE
= 450V , V
BE(off)
= 1.5V , T
C
=150°C
V
BE
= 6V , I
C
= 0
300
5.0
2.0
5.0
0.5
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
V
mA
mA
mA
Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Base – Emitter
On Voltage
Second Breakdown
Collector Current
I
C
= 0.1A , V
CE
= 10V
I
C
= 0.75A , V
CE
= 2V
I
C
= 0.75A , V
CE
= 10V
I
C
= 0.75A , I
B
= 75mA
I
C
= 0.75A , I
B
= 75mA
I
C
= 0.1A , V
CE
= 10V
(V
CC
= 100V)
40
10
30
100
150
1.0
1.8
1.4
350
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
—
V
V
V
mA
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
s/b
Current Gain –
Bandwidth Product (2)
Output Capacitance
I
C
= 200mA , V
CE
= 10V
f
test
= 5.0MHz
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
15
120
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
MHz
pF
f
T
C
ob
Rise Time
Storage Time
Fall Time
V
CC
= 200V , I
C
= 0.75A
R
L
= 200
W
, I
B1
= 100mA
V
CC
= 200V , I
C
= 0.75A
I
B1
= I
B2
= 75mA
V
CC
= 200V , I
C
= 0.75A
I
B1
= I
B2
= 75mA
0.5
6.0
3.0
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
m
S
m
S
m
S
t
r
t
s
t
f
OFF CHARACTERISTICS
ON CHARACTERISTICS
(1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
NOTES:
(1) Pulse Test: Pulse Width = 300
m
s , Duty Cycle
￡
2%
(2) f
T
=
|
h
fe
|
f
test
RBAND RCvaried to obtain desired current levels.
D1must be fast recovery type.
For tdand tr, D1is disconnected and V2 = 0.
V
CEO(sus)
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N4242 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3 |
| 2N4243 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 10A I(C) | TO-3 |
| 2N4244 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-3 |
| 2N4245 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3 |
| 2N4246 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 10A I(C) | TO-3 |
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