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參數(shù)資料
| 型號： | 2N4150S |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 10000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2N4150S |
Data S heet No. 2N4150
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 0.1 A, pulsed
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Emitter Cutoff Current
V
CE
= 60 V
V
BE
= 0.5 V, V
CE
= 100 V
V
BE
= -0.5 V, V
CE
= 80 V, T
C
= +150
o
C
Emitter-Base Cutoff Current
V
EB
= 5V
Collector-Base Cutoff Current
V
CB
= 80 V
ON Characteristics
Forward current Transfer Ratio
I
C
= 1 A, V
CE
= 5 V, pulsed
I
C
= 5 A, V
CE
= 5.0 V, pulsed
I
C
= 10 A, V
CE
= 5 V
I
C
= 5 A, V
CE
= 5.0 V, T
C
= -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 5 A, I
B
= 0.5 A pulsed
I
C
= 10 A, I
B
= 1 A, pulsed
Base-Emitter Saturation Voltage
I
C
= 5 A, I
B
= 0.5 A, pulsed
I
C
= 10 A, I
B
= 1 A, pulsed
Safe Operating Area, Continuous DC
Symbol
Min
Max
Unit
I
CEO1
I
CEX
I
CEX2
---
---
10
10
100
μA
μA
μA
I
CBO
---
0.1
μA
μA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
100
---
I
EBO
---
0.1
V
(BR)CEO
70
---
V
(BR)EBO
7.0
---
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
50
40
10
20
200
120
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
---
---
0.6
2.5
V dc
V dc
V
BE(sat)1
V
BE(sat)2
---
---
1.5
2.5
V dc
V dc
V
CE
= 40 V, I
C
= 0.22 A
V
CE
= 70 V, I
C
= 90 mA
Min
T
C
= 25
o
C, t = 1.0 s
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 0.2 A, f = 10 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Small Signal, Short Circuit, Forward Current
V
CE
= 10 V, I
C
= 50 mA, f = 1 kHz
Switching Characteristics
Delay Time
Per Figure 4, MIL-PRF-19500/394C
Rise Time
Per Figure 4, MIL-PRF-19500/394C
Storage Time
Per Figure 4, MIL-PRF-19500/394C
Fall Time
Per Figure 4, MIL-PRF-19500/394C
Symbol
Max
Unit
---
|h
fe
|
1.5
7.5
pF
C
OBO
---
350
h
fe
40
160
---
Symbol
Min
Max
Unit
ns
t
d
---
50
t
r
---
500
ns
t
s
---
1.5
ns
t
f
---
50
ns
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| 2N4150S_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
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| 2N4166 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SCR, V(DRM) = 600V TO 699.9V |
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