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參數(shù)資料
| 型號： | 2N3998JV |
| 廠商： | SEMICOA CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CAN PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N3998JV |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3998
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3998J)
JANTX level (2N3998JX)
JANTXV level (2N3998JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power switching
Power transistor
NPN silicon transistor
Features
Hermetically sealed TO-x metal can
Also available in chip configuration
Chip geometry 9201
Reference document:
MIL-PRF-19500/374
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
100
Volts
Emitter-Base Voltage
VEBO
8
Volts
Collector Current, Continuous
IC
5
A
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
2
11.4
W
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 25
°C
PT
30
300
W
mW/
°C
Thermal Resistance
RθJC
3.33
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
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