參數(shù)資料
型號： 2N3956
廠商： InterFET Corporation
英文描述： N-Channel Dual Silicon Junction Field-Effect Transistor
中文描述： N溝道雙硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 67K
代理商： 2N3956
01/99
B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
TOD71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
At 25°C free air temperature:
Static Electrical Characteristics
2N3954
2N3955
2N3956
Process NJ16
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 50
– 50
– 50
V
pA
nA
pA
nA
V
V
V
V
mA
I
G
= – 1μA, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
DS
= 20V, I
D
= 200 μA
V
DS
= 20V, I
D
= 200 μA
V
DS
= 20V, I
D
= 50 μA
V
DS
= 20V, I
D
= 200 μA
V
DS
= – 20V, I
G
= 1 nA
V
DS
= V, I
G
= 1 mA
V
DS
= 20V, V
GS
= V
Gate Reverse Current
I
GSS
– 100
– 500
– 50
– 250
– 4.2
– 4
– 4.5
2
5
– 100
– 500
– 50
– 250
– 4.2
– 4
– 4.5
2
5
– 100
– 500
– 50
– 250
– 4.2
– 4
– 4.5
2
5
T
A
= 125°C
Gate Operating Current
I
G
T
A
= 125°C
Gate Source Voltage
V
GS
– 0.5
– 1
– 0.5
– 1
– 0.5
– 1
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
V
GS(F)
I
DSS
0.5
0.5
0.5
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
fs
1000
1000
3000
1000
1000
3000
1000
1000
3000
μS
μS
μS
pF
pF
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
V
dg
= 10V, I
S
= A
f = 1 kHz
f = 200MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Common Source Output Capacitance
Common Source Input Capacitance
Drain Gate Capacitance
g
os
C
iss
C
dgo
35
4
1.5
35
4
1.5
35
4
1.5
Common Source Reverse
Transfer Capacitance
C
rss
1.2
1.2
1.2
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Noise Figure
NF
0.5
0.5
0.5
dB
V
DS
= 20V, V
GS
= V,
R
g
= 10M
V
DS
= 20V, I
D
= 200μA
V
DS
= 20V, V
GS
= V
V
DS
= 20V, I
D
= 200μA
f = 100 Hz
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
|I
G1
– I
G2
|
I
DSS1
/I
DSS2
0.95
|V
GS1
– V
GS2
|
10
1
5
10
1
10
10
1
15
nA
T
A
= 125°C
0.95
0.95
mV
T
A
= 25°C
to = – 55°C
T
A
= 25°C
to = +125°C
f = 1 kHz
Differential Gate Source Voltage
with Temperature
V
GS1
– V
GS2
T
0.8
2
4
mV/°C
V
DS
= 20V, I
D
= 200μA
1
2.5
5
mV/°C
V
DS
= 20V, I
D
= 200μA
Transconductance Ratio
g
fs1
/g
fs2
0.97
1
0.97
1
0.97
1
V
DS
= 20V, I
D
= 200μA
￥ Low and Medium Frequency
Differential Amplifiers
￥ High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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