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參數(shù)資料
| 型號： | 2N3954 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2N3954 |
01/99
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
Gate Current
50 mA
Total Device Power Dissipation (each side)
250 mW
@ 85°C Case Temperature (both sides)
500 mW
Power Derating (both sides)
4.3 mW/°C
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
At 25°C free air temperature:
2N3954
2N3955
2N3956
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 50
V
IG = – 1A, VDS = V
Gate Reverse Current
IGSS
– 100
pA
VGS = – 30V, VDS = V
– 500
nA
VGS = – 30V, VDS = V
TA = 125°C
Gate Operating Current
IG
– 50
pA
VDS = 20V, ID = 200 A
– 250
nA
VDS = 20V, ID = 200 A
TA = 125°C
Gate Source Voltage
VGS
– 4.2
V
VDS = 20V, ID = 50 A
– 0.5
– 4
– 0.5
– 4
– 0.5
– 4
V
VDS = 20V, ID = 200 A
Gate Source Cutoff Voltage
VGS(OFF)
– 1
– 4.5
– 1
– 4.5
– 1
– 4.5
V
VDS = – 20V, IG = 1 nA
Gate Source Forward Voltage
VGS(F)
222
V
VDS = V, IG = 1 mA
Drain Saturation Current (Pulsed)
IDSS
0.5
5
0.5
5
0.5
5
mA
VDS = 20V, VGS = V
Dynamic Electrical Characteristics
Common Source Forward
gfs
1000
3000
1000
3000
1000
3000
S
VDS = 20V, VGS = V
f = 1 kHz
Transconductance
1000
S
VDS = 20V, VGS = V
f = 200 MHz
Common Source Output Capacitance
gos
35
S
VDS = 20V, VGS = V
f = 1 kHz
Common Source Input Capacitance
Ciss
444
pF
VDS = 20V, VGS = V
f = 1 MHz
Drain Gate Capacitance
Cdgo
1.5
pF
Vdg = 10V, IS = A
f = 1 MHz
Common Source Reverse
Crss
1.2
pF
VDS = 20V, VGS = V
f = 1 MHz
Transfer Capacitance
Noise Figure
NF
0.5
dB
VDS = 20V, VGS = V,
f = 100 Hz
Rg = 10 M
Differential Gate Current
| IG1 – IG2 |
101010
nA
VDS = 20V, ID = 200A
TA = 125°C
Saturation Drain Current Ratio
IDSS1/IDSS2 0.95
1
0.95
1
0.95
1
VDS = 20V, VGS = V
Differential Gate Source Voltage
|VGS1–VGS2|
510
15
mV
VDS = 20V, ID = 200A
TA = 25°C
Differential Gate Source Voltage
VGS1–VGS2
0.8
2
4
mV/°C
VDS = 20V, ID = 200A
to = – 55°C
with Temperature
T
TA = 25°C
1
2.5
5
mV/°C
VDS = 20V, ID = 200A
to = +125°C
Transconductance Ratio
gfs1/gfs2
0.97
1
0.97
1
0.97
1
VDS = 20V, ID = 200A
f = 1 kHz
Low and Medium Frequency
Differential Amplifiers
High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/14/99 11:29 AM
Page B-5
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PDF描述 |
|---|---|
| 2N3956 | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 2N3958 | 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 2N5565 | 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 2N5566 | 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 2N5911 | 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3954_DOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3954_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3954_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3954_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3954A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 50V V(BR)DSS | 5MA I(DSS) | TO-71 |
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