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參數(shù)資料
| 型號(hào)： | 2N3906DCSM-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 10K |
| 代理商： | 2N3906DCSM-JQR-B |
2N3906DCSM
Dual Bipolar PNP Devices.
V
CEO =
40V
I
C = 0.2A
All Semelab hermetically sealed products can
be processed in accordance with the
requirements of BS, CECC and JAN, JANTX,
JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
40
V
I
C(CONT)
0.2
A
h
FE
@ 10/1m (V
CE / IC)
100
-
f
t
250M
Hz
P
D
0.31
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Dual Bipolar PNP Devices in a
hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
6
3
4
5
2.54
±
0.13
(0.10
±
0.005)
0.64
±
0.06
(0.025
±
0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4.32
±
0.13
(0.170
±
0.005)
LCC2 (MO-041BB)
Pinouts
Pin 1 – Collector 1
Pin 4 – Collector 2
Pin 2 – Base 1
Pin 5 – Emitter 2
Pin 3 – Base 2
Pin 6 – Emitter 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3906E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| 2N3906G | 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3906-G | 功能描述:二極管 - 通用，功率，開關(guān) -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 2N3906G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N3906GE8487 | 制造商:GE 功能描述:2N3906 |
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